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SILICON TRANSISTOR. 2N7368 Datasheet

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SILICON TRANSISTOR. 2N7368 Datasheet






2N7368 TRANSISTOR. Datasheet pdf. Equivalent




2N7368 TRANSISTOR. Datasheet pdf. Equivalent





Part

2N7368

Description

NPN HIGH POWER SILICON TRANSISTOR



Feature


www.DataSheet4U.com TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices 2N7368 Q ualified Level JAN JANTX JANTXV MAXIMU M RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Colle ctor-Base Voltage 80 VCBO Emitter-Base Voltage 7.0 VEBO Base Current IB 4.0 Co llector Current 10.
Manufacture

Microsemi Corporation

Datasheet
Download 2N7368 Datasheet


Microsemi Corporation 2N7368

2N7368; IC DataSheet4U.com Total Power Dissipat ion @ TC = 250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHA RACTERISTICS Characteristics Thermal Re sistance, Junction-to-Case Symbol RθJC 0 Max. 1.5 TO-254* 1) Derate linear ly 0.657 W/ C for TC > 25 C *See append ix A for package outline 0 ELECTRICAL CHARACTERISTICS (T.


Microsemi Corporation 2N7368

C = 250C unless otherwise noted) Charact eristics Symbol Min. Max. Unit OFF CHA RACTERISTICS Collector-Emitter Breakdow n Voltage IC = 0.2 Adc Collector-Emitte r Cutoff Current VCE = 70 Vdc Collector -Emitter Cutoff Current VCE = 80 Vdc, V BE = 1.5 Vdc Emitter-Base Cutoff Curren t VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEB O 80 1.0 1.0 1.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawre.


Microsemi Corporation 2N7368

nce, MA 01841 DataSheet4U.com 1-800-446- 1158 / (978) 794-1666 / Fax: (978) 689- 0803 120101 Page 1 of 2 DataSheet4U.c om DataSheet 4 U .com www.DataSheet4U. com 2N7368 JAN SERIES ELECTRICAL CHAR ACTERISTICS (con’t) Characteristics S ymbol Min. Max. Unit ON CHARACTERISTIC S (2) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.0 Vdc IC = 3.0 Adc, VCE = 2.0 Vdc Colle.

Part

2N7368

Description

NPN HIGH POWER SILICON TRANSISTOR



Feature


www.DataSheet4U.com TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices 2N7368 Q ualified Level JAN JANTX JANTXV MAXIMU M RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Colle ctor-Base Voltage 80 VCBO Emitter-Base Voltage 7.0 VEBO Base Current IB 4.0 Co llector Current 10.
Manufacture

Microsemi Corporation

Datasheet
Download 2N7368 Datasheet




 2N7368
www.DataSheet4U.com
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/622
Devices
2N7368
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol Value
Collector-Emitter Voltage
VCEO
80
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
7.0
Base Current
IB 4.0
Collector Current
Total Power Dissipation
DataSheIeCt4U.com 10
@ TC = 250C (1)
PT 115
Operating & Storage Junction Temperature Range
TJ, Tstg -65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.657 W/0C for TC > 250C
RθJC
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.2 Adc
Collector-Emitter Cutoff Current
VCEO(sus)
VCE = 70 Vdc
Collector-Emitter Cutoff Current
ICES
VCE = 80 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
ICEX
VEB = 7.0 Vdc
IEBO
TO-254*
*See appendix A for
package outline
Min. Max.
Unit
80 Vdc
1.0 mAdc
1.0 mAdc
1.0 mAdc
DataShee
6 Lake Street, Lawrence, MA 01841
DataSheet4U.com1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
DataSheet4 U .com
DataSheet4U.com
120101
Page 1 of 2




 2N7368
www.DataSheet4U.com
et4U.com
2N7368 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 3.0 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz
Output Capacitance
VCB =10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t 1.0 s
Test 1
VCE = 11.5 Vdc, IC = 10 Adc
Test 2
VCE = 45 Vdc, IC = 2.5 Adc
Test 3
VCE = 60 Vdc, IC = 0.9 Adc
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle D2a.t0a%S.heet4U.com
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Min. Max. Unit
50 175
30 140
1.0 Vdc
1.5 Vdc
4.0 20
500
pF
6 Lake Street, Lawrence, MA 01841
DataSheet4U.com1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
DataSheet4 U .com
DataSheet4U.com
120101
Page 2 of 2










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