www.DataSheet4U.com
GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode
LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC
Features...
www.DataSheet4U.com
GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode
LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC
Features
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of photo
transistor. Wavelength is 880nm.
Package Dimensions
LTE-4238/LTE-4238C
Description
The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of silicon photo
transistor.
ee DataSh
DataSheet4U.com
LTE-5238A/LTE-5238AC
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice.
DataSheet4U.com
10-26
DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
Absolute Maximum Ratings at Ta =25
Parameter
Power Dissipation Peak Forward Current(300pps, 10 Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm (.063 in.) from body] s pulse)
Maximum Rating
150 2 100 5 -40 -55 260 to +85 to +100 for 5 Seconds
Unit
mW ...