H11G3

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. H11G1 H11G2 H11G3 FEATURES High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA Low leakage current at elevated temperature (maximum 100 µA at 80°C) Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C Input-Output Isolation Voltage EMITTER Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD VISO IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 5300 60 6.0 3.0 100 1.8 ...