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H11G3 Dataheets PDF



Part Number H11G3
Manufacturers Motorola Inc
Logo Motorola  Inc
Description 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)
Datasheet H11G3 DatasheetH11G3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they pr.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base–emitter resistors. The on–chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance. • High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA) • High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • Interfacing and coupling systems of different potentials and impedances • Phase and Feedback Controls • General Purpose Switching Circuits • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts mA Amps mW mW/°C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min] H11G3 [CTR = 200% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 6 5 4 PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE N.C. EMITTER COLLECTOR BASE Emitter–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 s) Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VEBO IC PD Volts mA mW mW/°C PD TA Tstg TL VISO 250 2.94 – 55 to +100 – 55 to +150 260 7500 mW mW/°C °C °C °C Vac(pk) 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data ©Motorola Motorola, Inc. 1995 1 H11G1 H11G2 H11G3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED Reverse Leakage Current (VR = 3 V) Forward Voltage IF = 10 mA) Capacitance (V = 0 V, f = 1 MHz) DARLINGTON OUTPUT (TA = 25°C and IF = 0 unless otherwise noted) Collector–Emitter Breakdown Current (IC = 1 mA, IF = 0) V(BR)CEO H11G1 H11G2 H11G3 V(BR)CBO H11G1 H11G2 H11G3 V(BR)EBO ICEO H11G1 H11G1 H11G2 H11G2 H11G3 CCB IC (CTR)(2) H11G1, 2 H11G1, 2 H11G3 VCE(sat) H11G1, 2 H11G1, 2 H11G3 VISO CIO ton toff — — — 7500 — — 0.75 0.85 0.85 — 1011 2 1 1 1.2 — — — Vac(pk) Ohms pF µs 100 (1000) 5 (500) 2 (200) — — — — — — Volts — — — — — — — — — — — 6 100 100 100 100 100 — nA µA nA µA nA pF 100 80 55 7 — — — — — — — — Volts 100 80 55 — — — — — — Volts Volts IR VF CJ — — — 0.05 1.1 18 10 1.5 — µA Volts pF Symbol Min Typ(1) Max Unit Collector–Base Breakdown Voltage (IC = 100 µA, IF = 0) Emitter–Base Breakdown Voltage (IE = 100 µA, IF = 0) Collector–Emitter Dark Current (VCE = 80 V) (VCE = 80 V, TA = 80°C) (VCE = 60 V) (VCE = 60 V, TA = 80°C) (VCE = 30 V) Capacitance (VCB = 10 V, f = 1 MHz) COUPLED (TA = 25°C unless otherwise noted) Collector Output Current (VCE = 1 V, IF = 10 mA) (VCE = 5 V, IF = 1 mA) (VCE = 5 V, IF = 1 mA) Collector–Emitter Saturation Voltage (IF = 1 mA, IC = 1 mA) (IF = 16 mA, IC = 50 mA) (IF = 20 mA, IC = 50 mA) Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second) Isolation Resistance(3) (V = 500 Vdc) Isolation Capacitance(3) (V = 0 V, f = 1 MHz) SWITCHING (TA = 25°C) Turn–On Time Turn–Off Time 1. 2. 3. 4. (IF = 10 mA, VCC = 5 V, RL = 100 Ω, Pulse Width 300 µs, f = 30 Hz) mA (%) p — — 5 100 — — Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2 Motorola Optoelectronics Device Data H11G1 H11G2 H11G3 TYPICAL CHARACTERISTICS 100 IC, NORMALIZED OUTPUT CURRENT 100 IC, NORMALIZED OUTPUT CURRENT IF = 50 mA IF = 5 mA NORMALIZED TO: TA = 25°C IF = 1 mA (300 µs PULSES) VCE = 5 V IF = 1 mA IF = 0.5 mA –40 –20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) 120 140 10 NORMALIZED TO: VCE = 5 V IF = 1 mA (300 µs PULSES) 10 1 1 0.1 0.01 0.1 1 10 100 IF, IRED INPUT CURRENT (mA) 1000 0.1 –60 Figure 1. Output Current versus Input Current Figure 2. Output Current .


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