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P7NB60FP Datasheet, Equivalent, STP7NB60FP.

STP7NB60FP

STP7NB60FP

 

 

 

Part P7NB60FP
Description STP7NB60FP
Feature www.
DataSheet4U.
com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.
2 Ω < 1.
2 Ω ID 7.
2 A 4.
1 A TYPI CAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv /dt CAPABILITY 100% AVALANCHE TESTED VE RY LOW INTRINSIC CAPACITANCES GATE CHAR GE MINIMIZED 1 2 3 1 2 3 DESCRIPTION U sing the latest high voltage MESH OVERL AY™ process, SGS-Thomson has designed an advanced family of power MOSFETs wi th outstanding performances.
The new pa tent pending strip layout coupled with the Company’s proprietary edge termin ation structure, gives the .
Manufacture ST Microelectronics
Datasheet
Download P7NB60FP Datasheet
Part P7NB60FP
Description STP7NB60FP
Feature www.
DataSheet4U.
com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.
2 Ω < 1.
2 Ω ID 7.
2 A 4.
1 A TYPI CAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv /dt CAPABILITY 100% AVALANCHE TESTED VE RY LOW INTRINSIC CAPACITANCES GATE CHAR GE MINIMIZED 1 2 3 1 2 3 DESCRIPTION U sing the latest high voltage MESH OVERL AY™ process, SGS-Thomson has designed an advanced family of power MOSFETs wi th outstanding performances.
The new pa tent pending strip layout coupled with the Company’s proprietary edge termin ation structure, gives the .
Manufacture ST Microelectronics
Datasheet
Download P7NB60FP Datasheet

P7NB60FP

P7NB60FP
P7NB60FP

P7NB60FP

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