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STP7NB60FP Datasheet, Equivalent, PowerMESH MOSFET.N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Part | STP7NB60FP |
|---|---|
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Feature | STP7NB60 STP7NB60FP
N - CHANNEL ENHANCEM ENT MODE PowerMESH™ MOSFET
TYPE STP7N B60 STP7NB60F P
s s s s s
V DSS 600 V 600 V
R DS(on) < 1. 2 Ω < 1. 2 Ω ID 7. 2 A 4. 1 A TYPICAL RDS(on) = 1. 0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A VALANCHE TESTED VERY LOW INTRINSIC CAPA CITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Th omson has designed an advanced family o f power MOSFETs with outstanding perfor mances. The new patent pending strip la yout coupled with the Company’s propr ietary edge termination structure, give s the lowest RDS(on) per a . |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | STP7NB60FP |
|---|---|
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Feature | STP7NB60 STP7NB60FP
N - CHANNEL ENHANCEM ENT MODE PowerMESH™ MOSFET
TYPE STP7N B60 STP7NB60F P
s s s s s
V DSS 600 V 600 V
R DS(on) < 1. 2 Ω < 1. 2 Ω ID 7. 2 A 4. 1 A TYPICAL RDS(on) = 1. 0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A VALANCHE TESTED VERY LOW INTRINSIC CAPA CITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Th omson has designed an advanced family o f power MOSFETs with outstanding perfor mances. The new patent pending strip la yout coupled with the Company’s propr ietary edge termination structure, give s the lowest RDS(on) per a . |
| Manufacture | ST Microelectronics |
| Datasheet |
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