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STP7NB60FP Datasheet, Equivalent, PowerMESH MOSFET.

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

 

 

 

Part STP7NB60FP
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Feature STP7NB60 STP7NB60FP N - CHANNEL ENHANCEM ENT MODE PowerMESH™ MOSFET TYPE STP7N B60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.
2 Ω < 1.
2 Ω ID 7.
2 A 4.
1 A TYPICAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A VALANCHE TESTED VERY LOW INTRINSIC CAPA CITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Th omson has designed an advanced family o f power MOSFETs with outstanding perfor mances.
The new patent pending strip la yout coupled with the Company’s propr ietary edge termination structure, give s the lowest RDS(on) per a .
Manufacture ST Microelectronics
Datasheet
Download STP7NB60FP Datasheet
Part STP7NB60FP
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Feature STP7NB60 STP7NB60FP N - CHANNEL ENHANCEM ENT MODE PowerMESH™ MOSFET TYPE STP7N B60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.
2 Ω < 1.
2 Ω ID 7.
2 A 4.
1 A TYPICAL RDS(on) = 1.
0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A VALANCHE TESTED VERY LOW INTRINSIC CAPA CITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Th omson has designed an advanced family o f power MOSFETs with outstanding perfor mances.
The new patent pending strip la yout coupled with the Company’s propr ietary edge termination structure, give s the lowest RDS(on) per a .
Manufacture ST Microelectronics
Datasheet
Download STP7NB60FP Datasheet

STP7NB60FP

STP7NB60FP
STP7NB60FP

STP7NB60FP

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