www.DataSheet4U.com
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor
The NST3906DXV6T1 device is a spin- of...
www.DataSheet4U.com
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose
Transistor
The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
http://onsemi.com
(3) (2) (1)
hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating
Q1
Q2
(4)
(5) NST3906DXV6T1
(6)
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value -40 -40 Unit Vdc Vdc
6
54 2 3
1
DataSheet4U.com -5.0 Vdc
-200 HBM>16000, MM>2000 mAdc V
SOT-563 CASE 463A PLASTIC
DataShee
MARKING DIAGRAM
A2 D
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) - 55 to +150 Unit mW mW/°C A2 = Specific Devic...