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STP9NK60ZFD Dataheets PDF



Part Number STP9NK60ZFD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STP9NK60ZFD DatasheetSTP9NK60ZFD Datasheet (PDF)

www.DataSheet4U.com STP9NK60ZFD - STF9NK60ZFD STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH™ MOSFET TARGET DATA TYPE STP9NK60ZFD STF9NK60ZFD STB9NK60ZFD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W 3 1 2 s TYPICAL RDS(on) = 0.85 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY DIODE TO-220 .

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www.DataSheet4U.com STP9NK60ZFD - STF9NK60ZFD STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH™ MOSFET TARGET DATA TYPE STP9NK60ZFD STF9NK60ZFD STB9NK60ZFD s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.95 Ω < 0.95 Ω < 0.95 Ω ID 7A 7A 7A Pw 104 W 32 W 104 W 3 1 2 s TYPICAL RDS(on) = 0.85 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY DIODE TO-220 TO-220FP 3 1 D2PAK DESCRIPTION The Fast SuperMESH™ series associates all adINTERNAL SCHEMATIC DIAGRAM vantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast DataSheet4U.com body-drain recovery diode. Such series complements the “FDmesh™” Advanced Technology. APPLICATIONS HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS s DataShee ORDERING INFORMATION SALES TYPE STP9NK60ZFD STF9NK60ZFD STB9NK60ZFDT4 MARKING P9NK60ZFD F9NK60ZFD B9NK60ZFD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL September 2003 1/9 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP9NK60ZFD - STF9NK60ZFD - STB9NK60ZFD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 / D2PAK VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 7 4.3 28 104 0.83 4000 TBD 2500 600 600 ± 30 7 (*) 4.3 (*) 28 (*) 32 0.26 TO-220FP V V V A A A W W/°C V V/ns V °C Unit ( ) Pulse width limited by safe operating area (1) ISD ≤7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) TO-220FP 3.85 Unit °C/W °C/W et4U.com DataSheet4U.com 1.02 30 62.5 300 DataShee Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7 280 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP9NK60ZFD - STF9NK60ZFD - STB9NK60ZFD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 100µA VGS = 10V, ID = 3.5 A 3 3.75 0.85 Min. 600 1 50 ±10 4.5 0.95 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.3 1110 135 30 72 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V DataSheet4U.com (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, VGS = 10V Min. Typ. 19 17 38 7 21 53 Max. Unit ns ns nC nC nC et4U.com DataShee SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 43 15 11 8 20 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forwa.


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