Power Transistors
2SD1257, 2SD1257A
www.DataSheet4U.com Silicon NPN epitaxial planar type
For power switching Compleme...
Power
Transistors
2SD1257, 2SD1257A
www.DataSheet4U.com Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB934
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 150 80 100 7 15 7 40 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1257 2SD1257A 2SD1257 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
emitter voltage 2SD1257A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1257 2SD1257A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC ...
