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PD -91580A
IRG4PH30K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimi...
www.DataSheet4U.com
PD -91580A
IRG4PH30K
INSULATED GATE BIPOLAR
TRANSISTOR
Features
High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
n-channel
Benefits
As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBT's offer highest power density motor controls possible This part replaces the IRGPH30K and IRGPH30M DataSheet4U.com devices
TO-247AC
DataShee
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
1200 20 10 40 40 10 ±20 121 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
Units
V A
µs V mJ W
°C
Thermal Resistance
...