XL1003

www.DataSheet4U.com 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1003 Chip Device Layout Features Balanced Output Stage Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 1.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage output balanced 24.0-40.0 GHz GaAs MMIC low noise amplifier has a Absolute Maximum Ratings small signal gain of 24.0 dB with a noise figure of 1.7 Supply Voltage (Vd) +5.5 VDC dB across the band. This MMIC uses Mimix Supply Current (Id) 130 mA Broadband’s 0.1 µm GaAs PHEMT device model Input Power (Pin) -5.0/-1.0 dBm technology, and is based upon electron beam Storage Temperature (Tstg) -65 to +165 OC lithography to ensure high repeatability and Operating Temperature (Ta) -55 to MTTF Table1 uniformity. The chip has surface passivation to protect Channel Temperature (Tch) MTTF Table1 and provide a rugged part with backside via holes DataSheet4U.com and gold metallization to allow either a conductive (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as epoxy or eutectic solder die attach process. This possible for maximum life. device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. DataShee Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return L...