XL1002

www.DataSheet4U.com 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal Absolute Maximum Ratings gain of 23.0 dB with a noise figure of 2.6 dB across the Supply Voltage (Vd) +6.0 VDC band. This MMIC uses Mimix Broadband’s 0.15 µm Supply Current (Id) 120 mA GaAs PHEMT device model technology, and is based Input Power (Pin) +15.0 dBm upon electron beam lithography to ensure high Storage Temperature (Tstg) -65 to +165 OC repeatability and uniformity. The chip has surface Operating Temperature (Ta) -55 to MTTF Table1 passivation to protect and provide a rugged part with Channel Temperature (Tch) MTTF Table 1 backside via holes and gold metallization to allow DataSheet4U.com either a conductive epoxy or eutectic solder die (1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as attach process. This device is well suited for possible for maximum life. Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. DataShee Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) 3 O...