www.DataSheet4U.com
GENERAL PURPOSE L TO X-BAND GaAs MESFET
FEATURES
HIGH POWER GAIN: 7 dB TYP at 12 GHz HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz LG = 0.8 µm, WG = 330 µm LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz LOW COST PLASTIC PACKAGE
2
NE721S01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
2.
1
J
3 0...
