TOSHIBA THYRISITOR SILICON PLANAR TYPE
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SF5GZ47,SF5JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5GZ47,SF5JZ47
MEDIUM POWER CONTROL APPLIC...
Description
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SF5GZ47,SF5JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF5GZ47,SF5JZ47
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage l Average On−State Current l Isolation Voltage : VDRM = 400, 600V : VRRM = 400, 600V : IT (AV) = 5A : VIsol = 1500V AC Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive<5ms, Tj = 0~125°C) SF5GZ47 SF5JZ47 SF5GZ47 VRSM SF5JZ47 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol
2
SYMBOL VDRM VRRM
RATING 400
UNIT
V 600 500 V 720 5 7.8 80 (50Hz) 88 (60Hz) 32 100 5 0.5 10 −5 2 −40~125 −40~125 1500 A A
Average On−State Current (Half Sine Waveform Tc = 85°C) R.M.S. On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.)
2
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1B
DataSheet4U.com A
A s A / µs W W V V A °C °C V
2
DataShee
Note 1: di / dt test condition, VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
DataSheet4U.com
1
DataSheet 4 U .com
2001-07-13
www.DataSheet4U.com
SF5GZ47,SF5JZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CH...
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