IS64WV102416BLL

www.DataSheet4U.com IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI's high-perform High-performance, low-power CMOS process ance CMOS technology. This highly reliable process coupled Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfornoise immunity mance and low power consumption devices. Easy memory expansion with CE and OE options When CE is HIGH (deselected), the device assumes a CE power-down standby mode at which the power dissipation can be reduced down with CMOS input levels. Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable TTL compatible inputs and outputs and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of the VDD 1.65V to 2.2V (IS61WV102416ALL) memory. A data byte allows Upper Byte (UB) and Lower speed = 20ns for VDD 1.65V to 2.2V Byte (LB) access. VDD 2.4V to 3.6V (IS61/64WV102416BLL) ee The device is packaged in the JEDEC standard 48-pin speed = 10ns for VDD 2.4V to 3.6V DataSh TSOP Type I and 48-pin Mini BGA (9mm x 11mm). speed = 8ns for VDD 3.3V + 5% DataSheet4U.com ...