IS63WV1024BLL

IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V High-performance, low-power CMOS process CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Packages available: – 32-pin TSOP (Type II) – 32-pin sTSOP (Type I) – 48-Ball miniBGA (6mm x 8mm) – 32-pin 300-mil SOJ Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1024BLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 25 µW (typical) with CMOS input levels. The IS63/64WV1024BLL operates from a single VDD power supply. The IS63/64WV1024BLL is available in 32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil) packages. A0-A16 VDD GND I/O0-I/O7 DECODER 128K X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CE OE WE CONTROL CIRCUIT Copyright ©...