2SK1413
Ordering number:EN4229
N-Channel Silicon MOSFET
2SK1413
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Description
Ordering number:EN4229
N-Channel Silicon MOSFET
2SK1413
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2076B
[2SK1413]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
2.0 1 2 3 3.5 5.45 5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
Conditions
Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150
Unit V V A A W W
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PW≤10µs, duty cycle≤1% Tc=25°C
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±20V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V 1.5 1.0 1.5 8.0 11.0 Conditions Ratings min 1500 100 ±100 3.5 typ max Unit V µA nA V S Ω
(Note) Be careful in handling the 2SK1413 because it has no protection diode between gate and source.
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Any and all SANYO products described or contained herein do no...
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