K1413

Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 2.0 1 2 3 3.5 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML Conditions Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150 Unit V V A A W W www.DataSheet.co.kr PW≤10µs, duty cycle≤1% Tc=25°C ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±20V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V 1.5 1.0 1.5 8.0 11.0 Conditions Ratings min 1500 100 ±100 3.5 typ max Unit V µA nA V S Ω (Note) Be careful in handling the 2SK1413 because it has no protection diode between gate and source. Continued on next page. Any and all SANYO products described or contained herein do no...