DatasheetsPDF.com

STP6NB25FP Dataheets PDF



Part Number STP6NB25FP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STP6NB25FP DatasheetSTP6NB25FP Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP6NB25 STP6NB25FP s s s s s STP6NB25 STP6NB25FP VDSS 250 V 250 V RDS(on) < 1.1 Ω < 1.1 Ω ID 6A 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with .

  STP6NB25FP   STP6NB25FP



Document
www.DataSheet4U.com N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP6NB25 STP6NB25FP s s s s s STP6NB25 STP6NB25FP VDSS 250 V 250 V RDS(on) < 1.1 Ω < 1.1 Ω ID 6A 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150 (1)ISD ≤ 6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. DataShee Value STP6NB25 250 250 ±30 6 3.8 24 75 0.6 5.5 2000 3.7 2.3 24 30 0.24 STP6NB25FP Unit V V V A A A W W/ °C V/ns °C °C 1/9 (•)Pulse width limited by safe operating area DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP6NB25/FP THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.66 62.5 0.5 300 TO-220FP 4.17 ° C/W ° C/W ° C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 200 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 ° C VGS = ±30V Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA nA et4U.com ON (1) Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current DataSheet4U.com Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID =3 A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 0.9 Max. 4 1.1 Unit V Ω DataShee 6 A DYNAMIC Symbol gfs (1) C iss Coss Crss Parameter Forward Transconductance I.


STP6NB25 STP6NB25FP MTE7800


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)