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N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh™ MOSFET
TYPE STP6NB25 STP6NB25FP
s s s s s
STP6NB25 STP6NB25FP
VDSS 250 V 250 V
RDS(on) < 1.1 Ω < 1.1 Ω
ID 6A 3.7 A
TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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2
3 1 2
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TO-220
TO-220FP
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150
(1)ISD ≤ 6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
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Value STP6NB25 250 250 ±30 6 3.8 24 75 0.6 5.5 2000 3.7 2.3 24 30 0.24 STP6NB25FP
Unit V V V A A A W W/ °C V/ns °C °C 1/9
(•)Pulse width limited by safe operating area
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STP6NB25/FP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.66 62.5 0.5 300 TO-220FP 4.17 ° C/W ° C/W ° C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 200 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 ° C VGS = ±30V Min. 600 1 50 ± 100 Typ. Max. Unit V µA µA nA
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ON (1)
Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current
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Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID =3 A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 0.9 Max. 4 1.1 Unit V Ω
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6
A
DYNAMIC
Symbol gfs (1) C iss Coss Crss Parameter Forward Transconductance I.