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STP6N25 STP6N25FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STP6N25 ...
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STP6N25 STP6N25FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
PRELIMINARY DATA TYPE STP6N25 STP6N25FI
s s s s s
VDSS 250 V 250 V
R DS(on) <1Ω <1Ω
ID 6A 4A
TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
APPLICATIONS TO-220 ISOWATT220 s HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR INTERNAL SCHEMATIC DIAGRAM TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT DataSheet4U.com s PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS
DataShe
e
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP6N25 V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
Value STP6N25FI 250 250 ± 20 6 4 24 70 0.56 -65 to 150 150 4 2.6 24 35 0.28 2000
Unit
V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
June 1993
1/10
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STP6N25/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 30...