HI669A

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings (Ta=25°C) TO-251 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ....................................................................................... 1 W Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 180 V BVCEO Collector to Emitter Voltage.................................................................................. 160 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current............................................................................................................ 1.5 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 180 160 5 60 30 Typ. 140 14 DataSheet4U.com DataShee Max. 10 1 1.5 200 - Unit V V V uA V V Test Conditions IC=1mA IC=10mA I...