H2N3417

HI-SINCERITY MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............................................................................