H2N5366

HI-SINCERITY MICROELECTRONICS CORP. H2N5366 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5366 is designed for general purpose applications requiring high breakdown voltages. Spec. No. : HE6275-A Issued Date : 1999.02.01 Revised Date : 2000.09.15 Page No. : 1/3 Features This device was designed for use as general purpose amplifier and switches. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... -40 V VCEO Collector to E...