www.DataSheet4U.com
MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power transistors in a plastic envelope, ...
www.DataSheet4U.com
MJE3055T/MJE2955T
GENERAL DESCRIPTION
Complementary, high power
transistors in a plastic envelope, primarily for use in audio and general purpose
SILICON EPITAXIAL PLANAR
TRANSISTOR
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 70 60 10 75 1.2 2.0 UNIT V V A A W V V s
VCBO VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time
Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A
1.5
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN -55 -
Tmb 25
MAX 70 60 5 10 6 75 150 150
UNIT V V v A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 4.0A; VCE = 4V IC = 0.5A; VCE = 10V VCB = 10V
MIN 60 20 5
MAX 1.0 2.5 1.2 100 350
UNIT mA ...
