NP34N055IHE

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252 DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) Low Ciss : Ciss = 1600 pF TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg DataShee DataSheet4U.com ±136 1.2 88 34 / 27 / 10 11 / 72 / 100 175 –55 to + 175 Total Power Dissipation (TA = 25 °C) Total Power Dissipation (TC = 25 °C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % Note2 Note2 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.70 125 °C/W °C/W DataSheet4U.com The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availabi...