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Power Transistors
2SC4026
Silicon NPN triple diffusion planar type
For high breakdown voltage high...
www.DataSheet4U.com
Power
Transistors
2SC4026
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 10 5 Unit V V V V
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
DataShee
DataSheet4U.com
A A W ˚C ˚C
A
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
1.5 35 2 150 –55 to +150
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC...