H2N6668

HI-SINCERITY MICROELECTRONICS CORP. H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/4 Description The H2N6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 Maximum Temperatures Storage Temperature ............................................................................................................................... -55~+150°C Junction Temperature ..................................................................................................................... +150°C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) ..................................................................................................................... 65 W Maximum Voltages and Currents BVCBO Collector to Base Voltage.........................................................................................................