MRF1150MA

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1150MA/D The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF1150MA MRF1150MB 150 W PEAK, 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C Storage Temperature Range Symbol VCBO VEBO IC PD Tstg Value 70 4.0 12 3.33 – 65 to +150 Unit Vdc Vdc Adc W/°C °C CASE 332–04, STYLE 1 (MRF1150MA) e DataShe CASE 332A–03, STYLE 1 (MRF1150MB) DataSheet4U.com 583 Watts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Base Breakdown Voltage (...