MRF1150MA

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1150MA/D The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation MRF1150MA 150 W PEAK, 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1) (2) Derate above 25°C Storage Temperature Range Symbol VCBO VEBO IC PD Tstg Value 70 4.0 12 3.33 –65 to +150 Unit Vdc Vdc Adc W/°C °C CASE 332–04, STYLE 1 DataShee DataSheet4U.com 583 Watts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — — — — ...