H2N7000

HI-SINCERITY MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ..................................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW Maximum Voltages and Currents (TA=25°C) BVDSS Drain to Source Voltag...