CY62167DV20

www.DataSheet4U.com CY62167DV20 MoBL2™ 16-Mb (1024K x 16) Static RAM Features Very high speed: 55 ns and 70 ns Wide voltage range: 1.65V to 2.2V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fMAX Ultra-low standby power Easy memory expansion with CE1, CE2, and OE features Automatic power-down when deselected CMOS for optimum speed/power Packages offered in a 48-ball FBGA toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then das pins (A0 through A 19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the ad Reading from the device is accomplished by taking Chip Enable 1 (CE 1) LOW and Chip Enable 2 (CE 2) HIGH and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byt...