K2723

DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. www.DataSheet4U.com 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. Low Ciss Built-in G-S Protection Diode Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0.2 1.5 ± 0.2 2.54 13.5MIN. 12.0 ± 0.2 FEATURES 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Temperature Storage Temperature *PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID (DC) ID (pulse) PT PT Tch Tstg 60 ±20 ±25 ±100 2.0 25 150 −55 to +150 V V A A W W °C °C Gate Drain Body Diode Gate Protection Diode Source The information in this document is subject to change without notice. Document No. D10623EJ2V0DS00 (2nd edition)...