DatasheetsPDF.com

/ 2SC2334. C2334 Datasheet

DatasheetsPDF.com

/ 2SC2334. C2334 Datasheet






C2334 2SC2334. Datasheet pdf. Equivalent




C2334 2SC2334. Datasheet pdf. Equivalent





Part

C2334

Description

KSC2334 / 2SC2334



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S C2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 i s a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as swi tching www.DataSheet4U.com regulators, DC/DC converters, and high-frequency po wer amplifiers. ORDERING INFORMATION P art No. 2SC2334 Pa.
Manufacture

ETC

Datasheet
Download C2334 Datasheet


ETC C2334

C2334; ckage TO-220AB FEATURES • Low collect or saturation voltage • Fast switchin g speed • Complementary transistor: 2 SA1010 (TO-220AB) ABSOLUTE MAXIMUM RAT INGS (TA = 25°C) Parameter Collector t o base voltage Collector to emitter vol tage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipati on Junction temperature S.


ETC C2334

torage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 150 1 00 7.0 7.0 15 3.5 40 1.5 150 −55 to + 150 Unit V V V A A A W W °C °C The i nformation in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not .


ETC C2334

all products and/or types are available in every country. Please check with an NEC Electronics sales representative fo r availability and additional informati on. Document No. D14902EJ2V1DS00 (2nd e dition) Date Published August 2004 NS C P(K) Printed in Japan 2002 2SC2334 EL ECTRICAL CHARACTERISTICS (TA = 25°C) P arameter Collector to emitter voltage S ymbol VCEO(SUS) VCE.

Part

C2334

Description

KSC2334 / 2SC2334



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S C2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 i s a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices such as swi tching www.DataSheet4U.com regulators, DC/DC converters, and high-frequency po wer amplifiers. ORDERING INFORMATION P art No. 2SC2334 Pa.
Manufacture

ETC

Datasheet
Download C2334 Datasheet




 C2334
DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
www.DataSheetr4eUg.ucolamtors, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SA1010
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW 300 µs,
duty cycle 10%
TC = 25°C
TA = 25°C
Ratings
150
100
7.0
7.0
15
Unit
V
V
V
A
A
3.5
40
1.5
150
55 to +150
A
W
W
°C
°C
ORDERING INFORMATION
Part No.
2SC2334
Package
TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14902EJ2V1DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002




 C2334
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
www.DataSheet4UD.Ccocmurrent gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCEO(SUS)
VCEX(SUS)1
VCEX(SUS)2
ICBO
ICER
ICEX1
ICEX2
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
ton
tstg
tf
IC = 5.0 A, IB1 = 0.5 A, L = 1 mH
IC = 5.0 A, IB1 = IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
IC = 10 A, IB1 = 1.0 A, IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
VCB = 100 V, IE = 0 A
VCE = 100 V, RBE = 51 , TA = 125°C
VCE = 100 V, VBE(OFF) = 1.5 V
VCE = 100 V, VBE(OFF) = 1.5 V,
TA = 125°C
VEB = 5.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.5 ANote
VCE = 5.0 V, IC = 3.0 ANote
VCE = 5.0 V, IC = 5.0 ANote
IC = 5.0 A, IB = 0.5 ANote
IC = 5.0 A, IB = 0.5 ANote
IC = 5.0 A, RL = 10 ,
IB1 = IB2 = 0.5 A, VCC 50 V
Refer to the test circuit.
Note Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
2SC2334
MIN.
100
100
100
40
40
20
TYP.
MAX.
10
1.0
10
1.0
10
200
0.6
1.5
0.5
1.5
0.5
Unit
V
V
V
µA
mA
µA
mA
µA
V
V
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D14902EJ2V1DS




 C2334
TYPICAL CHARACTERISTICS (TA = 25°C)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
www.DataSheet4U.com
Ambient Temperature TA (°C)
2SC2334
Case Temperature TC (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Data Sheet D14902EJ2V1DS
3



Recommended third-party C2334 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)