Semiconductor
July 1998
IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 an...
Semiconductor
July 1998
IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
-15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs
Features
Description
-15A and -19A, -80V and -100V rDS(ON) = 0.20Ω and 0.30Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
These are P-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly Developmental Type TA17521.
Symbol
D
IRF9540 IRF9541 IRF9542
TO-220AB TO-220AB TO-220AB
IRF9540 IRF9541 IRF9542
G S
IRF9543
TO-220AB
IRF9543
RF1S9540
TO-262AA
RF1S9540
RF1S9540SM
TO-263AB
RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
J...