MRF338

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF338/D The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50% (Min) Built–In Matching Network for Broadband Operation 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications MRF338 80 W, 400 to 512 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 333–04, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range DataShee DataSheet4U.com Symbol VCEO VCBO VEBO IC PD Tstg Value 30 60 4 9 12 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 8 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 30 60 4 — — — — — — Vdc Vdc Vdc...