BRF630 Datasheet: NPN Low Noise Silicon Microwave Transistor





BRF630 NPN Low Noise Silicon Microwave Transistor Datasheet

Part Number BRF630
Description NPN Low Noise Silicon Microwave Transistor
Manufacture Bipolarics
Total Page 4 Pages
PDF Download Download BRF630 Datasheet PDF

Features: www.DataSheet4U.com BIPOLARICS, INC. P art Number BRF630 NPN LOW NOISE SILICO N MICROWAVE TRANSISTOR PRODUCT DATA SHE ET FEATURES: DESCRIPTION AND APPLICATIO NS: Bipolarics' BRF630 is a high perfor mance silicon bipolar transistor intend ed for use in low noise applications at VHF, UHF and microwave frequencies. Th ese applications include narrowband and wideband amplifiers, oscillators and m icropower transmitters. Typical applica tions include cellular telephone preamp lifiers/mixers, CATV amplifiers and Par t 15 receivers and transmitters. Commer cial plastic, surface mount and hermeti c (including Stripline) packaging optio ns make this device very versatile; fro m consumer product to space flight. • • • High Gain Bandwidth Prod uct f = 12 GHz typ @ I C = 30mA t Low N oise Figure 1.4 dB typ at 1.0 GHz 1.7 d B typ at 2.0 GHz High Gain | S 21 | 2 = 16.9 dB @ 1.0 GHz 12.0 dB @ 2.0 GHz Di ce, Plastic, Hermetic and Surface Mount packages available Absolute Maximum Ratings: SYMBOL PARAMETERS RATING.

Keywords: BRF630, datasheet, pdf, Bipolarics, NPN, Low, Noise, Silicon, Microwave, Transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

www.DataSheet4U.com
BIPOLARICS, INC.
Part Number BRF630
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
High Gain Bandwidth Product
ft = 12 GHz typ @ IC = 30mA
Bipolarics' BRF630 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
Low Noise Figure
1.4 dB typ at 1.0 GHz
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
1.7 dB typ at 2.0 GHz
face mount and hermetic (including Stripline) packaging
High Gain
| S | 2 = 16.9 dB @ 1.0 GHz
21
12.0 dB @ 2.0 GHz
options make this device very versatile; from consumer prod-
uct to space flight.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING UNITS
Dice, Plastic, Hermetic and Surface
VCBO
Mount packages available
VCEO
DataSheet4VUE.cBOom
PERFORMANCE DATA:
Electrical Characteristics (TA = 25oC)
IC
TJ (1)
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
7
7
1.5
60
200
-65 to 150
V
V DataShee
V
mA
oC
oC
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
VCE = 8V, IC = 25 mA unless stated
UNIT
MIN. TYP.
MAX.
ft
|S 21 | 2
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
GHz
dB
dB
12.0
16.9
12.0
P1d B
G1d B
Power output at 1dB compression:
Gain at 1dB compression:
f = 1.0 GHz
f = 1.0 GHz
dBm
dBm
18.0
15.0
NF
hFE
ICBO
IEBO
DataSheet4U.com
CCB
Noise Figure: VCE = 8V, IC = 10mA
Forward Current Transfer Ratio:
VCE = 8V, IC =10 mA
Collector Cutoff Current : VCB = 8V
Emitter Cutoff Current : VEB = 1V
Collector Base Capacitance: VCB = 8V
f = 1.0 GHz
f = 1MHz
f = 1MHz
dB
µA
µA
pF
1.4
30 150
0.25
300
0.2
1.0
DataSheet4 U .com

           






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)