UPD29F064115-X

www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in word units. µPD29F064115-X can be read high speed with page mode. The µPD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided into four banks. While sectors in any bank are being erased or programmed, data can be read from the other three banks thanks to the simultaneous execution architecture. The banks are 8M bits, 24M bits, 24M bits and 8M bits. Input /output voltage is supplied to 2.7 to 3.3 V. Because the µPD29F064115-X enables the boot sector to be erased, it is ideal for storing a boot program. In addition, program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. 16 small sectors for storing parameters are provided, each of which can be erased in 4K words units. Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification ...