C3998

Ordering number : EN2732A 2SC3998 SANYO Semiconductors DATA SHEET 2SC3998 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time Fall Time Symbol Conditions ICES VCEO(sus) IEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) tstg tf VCE=1500V IC=100mA, IB=0A VEB=4V, IC=0A VCB=800V, IE=0A VCE=5V, IC=1.0A VCE=5V, IC=20A IC=20A, IB=5A IC=20A, IB=5A IC=12A, IB1=2.4A, IB2=--4.8A IC=12A, IB1=2.4A, IB2=--4.8A Ratings Unit 1500 V 800 V 6 V 25 A 50 A 3.5 W 250 W 150 °C --55 to +150 °C Ratings min typ 800 8 4 Unit max 1.0 mA V 1.0 mA 10 µA 30 8 5 V 1.5 V 3.0 µs 0.2 µs Any and all SANYO Semiconductor products described or contained herein do not have specifications that can hand...