2SA2168

www.DataSheet4U.com Ordering number : ENN8357 2SA2168 2SA2168 Features PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of MBIT process. High breakdown voltage and large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings --180 --160 --6 --1.5 --2.5 1.5 150 --55 to +150 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg DataSheet4U.com Conditions VCB=-120V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-5V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--500mA, IB=--50mA IC=--500mA, IB=--50mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --180 --160 --6 40 0.7 40 Ratings min typ max --1 --1 140* 80 120 22 --200 --0.85 --500 --1.2 MHz pF mV V V V V ns µs ns ...