2SA2140

www.DataSheet4U.com Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.0±0.5 For power amplification For TV VM circuit ■ Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) Full-pack package which can be installed to the heat sink with one screw. 15.0±0.5 9.9±0.3 4.6±0.2 2.9±0.2 φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −180 −180 −6 −1.5 −3 20 2.0 Unit V V V A A W °C °C 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee Internal Connection C B E DataSheet4U.com 150 −55 to +150 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol VCEO ICBO IEBO hFE VCE(sat) fT Cob ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −180 V, IE = 0 VEB = −6 V, IC = 0 VCE = −5 V, IC = − 0.1 A IC = −1 A, IB = − 0.1 A VCE = −10 V, IC = − 0.2 A, f = 10 MHz VCB = −10 V, IE = 0, f = 1 MHz IC = − 0.4 A, Resistance loaded IB1 = 0.04 A, IB2 = − 0.04 A VCC...