2SA2124 Datasheet: High-Current Switching Applications





2SA2124 High-Current Switching Applications Datasheet

Part Number 2SA2124
Description High-Current Switching Applications
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download 2SA2124 Datasheet PDF

Features: www.DataSheet4U.com Ordering number : EN N7920 2SA2124 2SA2124 Applications PNP Epitaxial Planar Silicon Transis tors High-Current Switching Applicatio ns Voltage regulators, relay drivers, lamp drivers, electrical equipment. Fe atures • • • • Adoption of MBI T processes. Low collector-to-emitter s aturation voltage. High current capacit y. High-speed switching. Specification s Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Col lector-to-Emitter Voltage Emitter-to-Ba se Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storag e Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (450mm2!0.8m) Tc=25°C Conditions Ratings -30 -30 Unit V V V A A mA W W °C °C DataSheet4U.com --6 --2 --5 - -400 1.3 3.5 150 --55 to +150 DataShee Electrical Characteristics at Ta=25° C Parameter Collector Cutoff Current Em itter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitt.

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Ordering number : ENN7920
2SA2124
2SA2124 PNP Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
High current capacity.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
DataSheet4U.com
Mounted on a ceramic board (450mm2!0.8m)
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Marking : AX
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
Conditions
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
IC=--1.5A, IB=--75mA
IC=--1.5V, IB=--75mA
Ratings
--30
--30
--6
--2
--5
--400
1.3
3.5
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
min
200
65
Ratings
typ
max
--0.1
--0.1
560
Unit
µA
µA
440 MHz
--0.2 --0.4 V
--0.95
--1.2 V
Continued on next page.
DataShee
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004EA TS IM TB-00000072 No.7920-1/4

           






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