type Transistor. 2SA2118 Datasheet

2SA2118 Transistor. Datasheet pdf. Equivalent

Part 2SA2118
Description Silicon PNP epitaxial planar type Transistor
Feature www.DataSheet4U.com Power Transistors 2SA2118 Silicon PNP epitaxial planar type For power amplific.
Manufacture Panasonic Semiconductor
Datasheet
Download 2SA2118 Datasheet

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2SA2118
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Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Features
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: 5 kV
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
200
V
180
V
6 V
2 A
3 A
25 W
2.0
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150 °C
55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
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Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −50 µA, IE = 0
200
V
Collector-emitter voltage (Base open) VCEO IC = −5 mA, IB = 0
180
V
Emitter-base voltage (Collector open) VEBO IE = −500 µA, IC = 0
6
V
Base-emitter voltage
VBE VCE = −10 V, IC = −400 mA
1 V
Collector-base cutoff current (Emitter open) ICBO VCB = −200 V, IE = 0
50 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −4 V, IC = 0
50 µA
Forward current transfer ratio
hFE1 * VCE = −10 V, IC = −150 mA
60 240
hFE2 VCE = −10 V, IC = −400 mA
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
1 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
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Publication date: July 2004
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SJD00315AED
1



2SA2118
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2SA2118
PC Ta
35
(1) TC = Ta
30
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
25
(1)
20
15
(2)
10
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
10
Non repetitive pulse, TC = 25°C
ICP
IC
1
t = 0.5 m
0.1 t = 1 ms
t = 5 ms
0.01
1
t=1s
10 100 1 000
Collector-emitter voltage VCE (V)
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