2SA2118 Datasheet PDF Download, Panasonic Semiconductor





(PDF) 2SA2118 Datasheet Download

Part Number 2SA2118
Description Power Transistors Silicon PNP epitaxial planar type
Manufacture Panasonic Semiconductor
Total Page 3 Pages
PDF Download Download 2SA2118 Datasheet PDF

Features: www.DataSheet4U.com Power Transistors 2SA2118 Silicon PNP epitaxial planar ty pe For power amplification For TV verti cal deflection output ■ Features • Satisfactory linearity of forward curre nt transfer ratio hFE • Dielectric br eakdown voltage of the package: 5 kV Full-pack package which can be instal led to the heat sink with one screw. Un it: mm 9.9±0.3 4.6±0.2 2.9±0.2 13.7 ±0.2 4.2±0.2 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 3.0±0.5 2.6±0.1 ■ Absolute Maximum Ratings TC = 25° C Parameter Collector-base voltage (Emi tter open) Collector-emitter voltage (B ase open) Emitter-base voltage (Collect or open) Collector current Peak collect or current Collector power dissipation Junction temperature Storage temperatur e Ta = 25°C Tj Tstg Symbol VCBO VCEO V EBO IC ICP PC Rating −200 −180 −6 −2 −3 25 2.0 Unit V V V A A W °C °C Solder Dip 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee DataSheet4U.com 150 −55 to +150 ■ Electrical Chara.

Keywords: 2SA2118, datasheet, pdf, Panasonic Semiconductor, Power, Transistors, Silicon, PNP, epitaxial, planar, type, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

www.DataSheet4U.com
Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Features
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: 5 kV
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
200
V
180
V
6 V
2 A
3 A
25 W
2.0
DataSheet4U.com
150 °C
55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
DataShee
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −50 µA, IE = 0
200
V
Collector-emitter voltage (Base open) VCEO IC = −5 mA, IB = 0
180
V
Emitter-base voltage (Collector open) VEBO IE = −500 µA, IC = 0
6
V
Base-emitter voltage
VBE VCE = −10 V, IC = −400 mA
1 V
Collector-base cutoff current (Emitter open) ICBO VCB = −200 V, IE = 0
50 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −4 V, IC = 0
50 µA
Forward current transfer ratio
hFE1 * VCE = −10 V, IC = −150 mA
60 240
hFE2 VCE = −10 V, IC = −400 mA
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
1 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
DataSheet4U.com
Publication date: July 2004
DataSheet4 U .com
SJD00315AED
1

        






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)