2SA2154MFV

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications High voltage and high current : VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026MFV Absolute Maximum Ratings (Ta = 25°C) 1.2 ± 0.05 0.8 ± 0.05 0.4 0.4 0.22 ± 0.05 Unit: mm 1.2 ± 0.05 0.80 ± 0.05 1 1 3 2 0.32 ± 0.05 0.13 ± 0.05 0.5 ± 0.05 Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage Emitter-base voltage Collector current VCEO VEBO IC −50 V −5 V −150 mA VESM 1.BASE 2.EMITTER 3.COLLECTOR Base current IB −30 mA JEDEC ― Collector power dissipation Junction temperature Storage temperature range PC 150* mW Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-1L1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.5 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated f...