SLA902F Datasheet: (SLA9000F Series) High Speed / High Integration Gate Array





SLA902F (SLA9000F Series) High Speed / High Integration Gate Array Datasheet

Part Number SLA902F
Description (SLA9000F Series) High Speed / High Integration Gate Array
Manufacture EPSON
Total Page 2 Pages
PDF Download Download SLA902F Datasheet PDF

Features: www.DataSheet4U.com PF841-02 SLA9000F S eries qHigh speed, high integration gat e array. qNumber of gates mounted: 2.7K to 44K gates. s DESCRIPTION The SLA900 0F series is a SOG type CMOS gate which has realized high speed, high integrat ion and high driving capability. This s eries is offered with 2,784 to 44,070 g ates to ensure an optimum application f or any mid size high speed systems. Thi s series is designed to operate on both 5 V and 3 V systems to correspond to i ncreasing low-voltage oriented applicat ions. Simplified level shifter cell is available on this series. And, the µA order low noise output cell of the seri es has made it suitable for small size, handy equipments and many other applic ations. s FEATURES q Super-high densit y (adopting 1.0µm silicon gate CMOS wi th 2-metal layer) q High-speed operatio n (operation delay of internal gate = 0 .3ns at 5.0V, 2-input Power NAND standa rd) q Simplified level shifter cells av ailable q Output drivability (IOL = 100µ, 2, 6, 12, 24 mA when 5..

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PF841-02
SLA9000F Series
qHigh speed, high integration gate array.
qNumber of gates mounted: 2.7K to 44K gates.
s DESCRIPTION
The SLA9000F series is a SOG type CMOS gate which has realized high speed, high integration and high
driving capability. This series is offered with 2,784 to 44,070 gates to ensure an optimum application for any mid
size high speed systems.
This series is designed to operate on both 5 V and 3 V systems to correspond to increasing low-voltage oriented
applications. Simplified level shifter cell is available on this series. And, the µA order low noise output cell of the
series has made it suitable for small size, handy equipments and many other applications.
s FEATURES
q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer)
q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard)
q Simplified level shifter cells available
q Output drivability (IOL = 100µ, 2, 6, 12, 24 mA when 5.0V, IOL = 100µ, 2, 4, 8, 12mA when 3.3V)
q On-chip RAM available
q Low noise output cells available
s PRODUCT LINEUP
Master
SLA902F
SLA904F
SLA907F SLA909F
SLA913F SLA919F
SLA927F
SLA944F
Total BCs (Raw Gates)
Usable Bcs
Number of PADs
Internal Gates
Propagation
Input Buffers
Delay
Output Buffers
I/O Level
Input Mode
Output Mode
2,784
1,809
80
4,392DataSh7e,8e7t24U.com9,540
13,144
19,350
27,234
2,854
4,723
5,724
7,229
10,642
13,617
100 128 144 160 184 208
tpd = 0.30ns (standard at 5.0V), tpd = 0.43ns (standard at 3.3V)
tpd = 0.91ns (standard at 5.0V), tpd = 1.08ns (standard at 3.3V)
tpd = 3.5ns (standard at 5.0V), tpd = 4.2ns (standard at 3.3V) CL = 50pF
TTL, CMOS
TTL, CMOS, Pull-up/Pull-down, Schmitt, 3.0/3.3/5.0V Level interface
Normal, Open drain, 3-state, Bi-directional, 3.0/3.3/5.0V Level interface
44,070
22,035
256
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