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M53230224CE2

Samsung Semiconductor

(M53230224CE2/CJ2) DRAM Module

www.DataSheet4U.com DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENER...


Samsung Semiconductor

M53230224CE2

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Description
www.DataSheet4U.com DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230224D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230224CE2/CJ2 FEATURES Part Identification - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder) - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold) Extended Data Out CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDPin & pinout PERFORMANCE RANGE Speed -50 -60 tRAC 50ns 60ns tCAC 15ns 15ns tRC 90ns 110ns tHPC 25ns 30ns PCB : Height(750mil), double sided component PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 NC DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 NC Vcc A8 A9 RAS1 RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 RAS1 NC W NC DQ8 D...




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