M53230404BY0

www.DataSheet4U.com DRAM MODULE M53230404BY0/BT0-C 4Byte 4Mx32 SIMM (4Mx16 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53230404BY0/BT0-C Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Changed the parameter tCAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS. Version 0.0 (June 1998) The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53230404BY0/BT0-C EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230404BY0/BT0-C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M53230404BY0/BT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230404BY0/BT0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230404BY0/BT0-C FEATURES Part Identification - M53230404BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230404BT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL...