(M53230804BT0-C/BY0) DRAM Module
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DRAM MODULE
M53230804BY0/BT0-C
4Byte 8Mx32 SIMM
PDpin(4Mx16 base)
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Description
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DRAM MODULE
M53230804BY0/BT0-C
4Byte 8Mx32 SIMM
PDpin(4Mx16 base)
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Revision 0.1 June 1998
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DRAM MODULE
Revision History
Version 0.0 (Sept. 1997)
M53230804BY0/BT0-C
Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Changed the parameter tCAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS.
Version 0.1 (June 1998)
The 3rd. generation of 64M DRAM components are applied for this module.
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DRAM MODULE
M53230804BY0/BT0-C EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230804BY0/BT0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
M53230804BY0/BT0-C
FEATURES
Part Identification - M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability...
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