(M53230804CT0-C/CY0) DRAM Module
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DRAM MODULE
M53230804CY0/CT0-C
4Byte 8Mx32 SIMM
(4Mx16 base)
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Description
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DRAM MODULE
M53230804CY0/CT0-C
4Byte 8Mx32 SIMM
(4Mx16 base)
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ee
Revision 0.0 June 1999
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DRAM MODULE
Revision History
Version 0.0 (June 1999)
The 4th. generation of 64Mb DRAM components are applied for this module.
M53230804CY0/CT0-C
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DRAM MODULE
M53230804CY0/CT0-C EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M53230804CY0/CT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804CY0/CT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230804CY0/CT0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
M53230804CY0/CT0-C
FEATURES
Part Identification - M53230804CY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804CT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed -C50 -C60
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
84ns 104ns
tHPC
20n...
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