(M53233200BE0/BJ0-C) DRAM Module
www.DataSheet4U.com
DRAM MODULE
M53233200BE0/BJ0-C
4Byte 32Mx32 SIMM
(16Mx4 base)
DataSheet4U.com
DataShee
Revisio...
Description
www.DataSheet4U.com
DRAM MODULE
M53233200BE0/BJ0-C
4Byte 32Mx32 SIMM
(16Mx4 base)
DataSheet4U.com
DataShee
Revision 0.1 June 1998
DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DRAM MODULE
Revision History
Version 0.0 (Sept. 1997)
M53233200BE0/BJ0-C
Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
Version 0.1 (June 1998)
The 3rd. generation of 64M DRAM components are applied for this module.
et4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet4 U .com
www.DataSheet4U.com
DRAM MODULE
M53233200BE0/BJ0-C EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53233200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53233200BE0/BJ0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
M53233200BE0/BJ0-C
FEATURES
Part Identification - M53233200BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53233200BJ0-C(4K cycles/64ms Ref, SOJ, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout ...
Similar Datasheet