2SK3762

www.DataSheet4U.com 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡W ) 2SK3762 unitF‚‚ Switching Regulator Applications 3.84}0.2 3.84} 0 .2 10.5 10.5 max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. Low drain-source ON resistance: R DS (ON) = 5.6ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 ƒÊ A (V DS = 720 V) Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) 1.3 13.4 13.4 min min. 3.9 max 3.9 max. Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 900 900 ±30 2.5 7.5 62 21.6 W mJ A mJ °C °C Unit V V V A 15.6 max 15.6 max. 2.7 1.5 max 1.5 max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 1 2 3 2.7 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DataSheet4U.com 6.2 150 -55~150 2.5 1. 2. 3. Gate Drain(HEAT SINK) Source DataShe e JEDEC JEITA TOSHIBA TO-220AB SC-46 \ Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.02 83.3 Unit °C/W °C/W Weight : 2.0g(typ.) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90...